APTC60HM45SCTG Datasheet | Microsemi

Features - G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel Si C Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration - - - - OUT2 G3 S3 G4 S4 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. 1- 8 - Rev 2 Benefits - Outstanding performance at high frequency operation OUT1 VBUS 0/VBUS - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting - Low profile - Ro HS pliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 49 ID Continuous Drain Current A Tc = 80°C 38 IDM Pulsed Drain current 130 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 45 mΩ PD Maximum Power Dissipation Tc = 25°C 250 W .. IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 m J EAS Single Pulse Avalanche Energy 1900 September, 2009 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage...