APTJC120AM13VCT1AG
Features
- Si C JFET- , Normally off (8
- SJEC120R100 in parallel per switch)
- Si C Schottky Diode- (2
- SDC30S120 in parallel per switch)
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
- Very low stray inductance
- Internal RC decoupling snubber
- High level of integration
- Al N substrate for improved thermal performance
- Internal thermistor for temperature monitoring
- Semisouth driver board (SGDR2500P2) remended for this module)
Benefits
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
-...
