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APTJC120AM13VCT1AG - SiC Power Module

Features

  • SiC JFET.
  • , Normally off (8.
  • SJEC120R100 in parallel per switch).
  • SiC Schottky Diode.
  • (2.
  • SDC30S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF.
  • Very low stray inductance.
  • Internal RC decoupling snubber.
  • High level of integration.
  • AlN substrate for improved thermal performance.
  • Internal thermistor for temperature monitoring.
  • S.

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Datasheet Details

Part number APTJC120AM13VCT1AG
Manufacturer Microsemi
File Size 390.06 KB
Description SiC Power Module
Datasheet download datasheet APTJC120AM13VCT1AG Datasheet
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APTJC120AM13VCT1AG Phase leg SiC Power Module VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Pins 7/8; 9/10; 11/12 must be shorted together Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  SiC JFET, Normally off (8 * SJEC120R100 in parallel per switch)  SiC Schottky Diode (2 * SDC30S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF  Very low stray inductance  Internal RC decoupling snubber  High level of integration  AlN substrate for improved thermal performance  Internal thermistor for temperature monitoring  Semisouth driver board (SGDR2500P2) recommended for this modul
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