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APTJC120AM25VCT1AG - SiC Power Module

Features

  • SiC JFET, Normally off (4.
  • SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together.
  • SiC Schottky Diode (3.
  • SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF.
  • Very low stray inductance.
  • Internal RC decoupling snubber.
  • High level of integration.
  • AlN substrate for improved thermal performanc.

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Datasheet Details

Part number APTJC120AM25VCT1AG
Manufacturer Microsemi
File Size 146.01 KB
Description SiC Power Module
Datasheet download datasheet APTJC120AM25VCT1AG Datasheet
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APTJC120AM25VCT1AG Phase leg SiC Power Module VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC JFET, Normally off (4* SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together • SiC Schottky Diode (3* SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF • Very low stray inductance • Internal RC decoupling snubber • High level of integration • AlN substrate for improved thermal performance • Internal thermistor for temperature monitoring • Semisouth driver board (SGDR2500P2) recommended for this module)
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