APTJC120AM25VCT1AG
Key Features
- SiC JFET, Normally off (4* SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together
- SiC Schottky Diode (3* SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF
- Very low stray inductance
- Internal RC decoupling snubber
- High level of integration
- AlN substrate for improved thermal performance
- Internal thermistor for temperature monitoring
- Semisouth driver board (SGDR2500P2) recommended for this module) Benefits
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
