Microsemi BFY90
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | BFY90 |
|---|---|
| Datasheet | BFY90 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
●●
●
● Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72
DESCRIPTION
: Silicon NPN transistor, designed for VHF/UHF equipment.APPLICATIONS
include low noise amplifier; oscillator, and mixer applications.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1310.PDF 10-25-99 BFY90ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 Value Typ. Max. 10 Unit Vdc nA (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 20 125 - DYNAMIC Symbol fT NFmin Cibo Test Conditions Min.
