BFY90
BFX89 BFY90
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
- Collector Current Continuous
Total Continuous Device Dissipation
<& TA = 25°C
Derate above 25°C Storage Temperature
Symbol v CEO v CBO VEBO
"C
TStq
Value 15 30
2.5 50
200 1.14
- 65 to + 200
Unit Vdc Vdc Vdc m Adc m W m W/°C
°C
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 10 m Adc, Ib = 0)
Collector Cutoff Current (Vcb = 15 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain d C = 2.0 m Adc, Vce = 10 Vdc) c{ = 25 m Adc, VC e = 1 Vdc)
SMALL SIGNAL CHARACTERISTICS
- Current-Gain Bandwidth Product! 1)
(IC = 2.0 m A, Vce = 5.0 Vdc, f = 500 MHz)
BFX89 BFY90
(IC = 25 m A, Vce = 5.0 Vdc, f = 500 MHz)
Emitter-Base Capacitance (V EB = 0.5 Vdc, lc = 0, f = 1.0 MHz)
Collector-Base Capacitance(2)
(Vcb = 10 Vdc, El...
