| Part number | BFY90 |
|---|---|
| Datasheet | BFY90-Motorola.pdf |
| File Size | 94.48 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | HIGH FREQUENCY TRANSISTOR |
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Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc, Ib = 0) Collector Cutoff Current (Vcb = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain dC = 2.0 mAdc, Vce = 10 Vdc) c{ = 25 mAdc, VC e = 1 Vdc) SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product!
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BFY90 | WIDE BAND VHF/UHF AMPLIFIER | Comset Semiconductors |
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BFY90 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | Seme LAB |
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BFY90 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation |
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BFY90 | WIDE BAND VHF/UHF AMPLIFIER | STMicroelectronics |
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BFY90 | NPN SILICON RF TRANSISTORS | Central Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| BFY50 | GENERAL PURPOSE TRANSISTOR |
| BFY51 | GENERAL PURPOSE TRANSISTOR |
| BFY52 | GENERAL PURPOSE TRANSISTOR |
| BFY81 | DUAL AMPLIFIER TRANSISTOR |
| BFY84 | DUAL AMPLIFIER TRANSISTOR |
