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BFY90 - HIGH FREQUENCY TRANSISTOR

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BFX89 BFY90 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Continuous Device Dissipation <& TA = 25°C Derate above 25°C Storage Temperature Symbol v CEO v CBO VEBO "C PD TStq Value 15 30 2.5 50 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc, Ib = 0) Collector Cutoff Current (Vcb = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain dC = 2.0 mAdc, Vce = 10 Vdc) c{ = 25 mAdc, VC e = 1 Vdc) SMALL SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product! 1) (IC = 2.
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