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MG1036 - GUNN Diodes

Download the MG1036 datasheet PDF (MG1001 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gunn diodes.

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.

The layers are processed using proprietary techniques resulting in low phase and 1/f noise.

Features

  • CW Designs to 500 mW.
  • Pulsed Designs to 10 W.
  • Frequency Coverage Specified from 5.9.
  • 95 GHz.
  • Low Phase Noise.
  • High Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MG1001-Microsemi.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 – MG1060 Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz.
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