MMBR911MLT1
MMBR911MLT1 is RF & MICROWAVE TRANSISTORS manufactured by Microsemi.
DESCRIPTION
The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi.
KEY FEATURES
! High FTau-6.0 GHz
! Low noise-2.9d B@1GHz
! Low cost SOT23 package
Symbol VCBO VCEO VEBO IC PDISS TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Parameter
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
-55 to +150
Unit V V V m A m W
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 225 C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23 MMBR911MLT1
Symbol
BVCBO BVCEO ICBO h FE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
IC = .1m A IC =1.0m A VCB =15V VCE =10V
Conditions...
