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MMBR911MLT1 - RF & MICROWAVE TRANSISTORS

General Description

The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.

Key Features

  • ! High FTau-6.0 GHz ! Low noise-2.9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WWW.Microsemi .COM PRELIMINARY RF PRODUCTS DIVISION MMBR911MLT1 RF & MICROWAVE TRANSISTORS DESCRIPTION The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES ! High FTau-6.0 GHz ! Low noise-2.9dB@1GHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.