Datasheet4U Logo Datasheet4U.com

MMBR5179LT1 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.

Features

  • ! High FTau-1.4GHz ! Low noise-4.5dB@200MHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG.

📥 Download Datasheet

Datasheet preview – MMBR5179LT1

Datasheet Details

Part number MMBR5179LT1
Manufacturer Microsemi
File Size 316.80 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MMBR5179LT1 Datasheet
Additional preview pages of the MMBR5179LT1 datasheet.

📁 Similar Datasheet

  • MMBR5179LT1 - RF AMPLIFIER TRANSISTOR NPN SILICON (Motorola)
  • MMBR5179 - RF AMPLIFIER TRANSISTOR (Samsung)
  • MMBR5179 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • MMBR5179 - RF Amplifier Transistor (Motorola)
  • MMBR5031 - RF Amplifier Transistor (Motorola)
  • MMBR5031LT1 - NPN Silicon High-Frequency Transistor (Motorola)
  • MMBR521LT1 - HIGH-FREQUENCY TRANSISTOR PNP SILICON (Motorola)
  • MMBR571 - NPN Silicon High Frequency Transisters (Motorola)
  • MMBR571L - Silicon NPN RF Transistor (Inchange Semiconductor)
  • MMBR571LT1 - NPN Silicon High-Frequency Transistors (Motorola)
Other Datasheets by Microsemi

Full PDF Text Transcription

Click to expand full text
WWW.Microsemi .COM PRELIMINARY RF PRODUCTS DIVISION MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES ! High FTau-1.4GHz ! Low noise-4.5dB@200MHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.
Published: |