| Part Number | MMBR5179LT1 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: . ! High FTau-1.4GHz ! Low noise-4.5dB@200MHz ! Low cost SOT23 package Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Parameter Value Collector-Base Voltage 20 Collector-Emitter Voltage 12 Emitter-Base Voltage 2.5 Device Current 50 Power Dissipation 375 J. |
MMBR5179LT1 Datasheet and Specifications PDF
The MMBR5179LT1 is a RF & MICROWAVE TRANSISTORS.
| Part Number | MMBR5179LT1 Datasheet |
|---|---|
| Description | RF AMPLIFIER TRANSISTOR NPN SILICON |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz. Speci.
STYLE 6 SOT *23 LOW PROFILE (TO *236AA/AB) DEVICE MARKING MMBR5179LT1 = 7H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector *Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector *Base Breakdown Voltage (IC = 0.00. |