Click to expand full text
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200 MHz • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 15 30 3.0 50 150 0.375 5.
MMBR5179LT1 Datasheet
