MMBR5179LT1
MMBR5179LT1 is RF AMPLIFIER TRANSISTOR NPN SILICON manufactured by Motorola Semiconductor.
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency Transistor
Designed for small- signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin- film circuits using surface mount ponents.
- High Gain
- Gpe = 15 dB Typ @ f = 200 MHz
- Low Noise
- NF = 4.5 dB Typ @ f = 200 MHz
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO...
