Datasheet Details
| Part number | MRF555 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 168.59 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | MRF555-Microsemi.pdf |
|
|
Overview: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER.
| Part number | MRF555 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 168.59 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | MRF555-Microsemi.pdf |
|
|
|
: Designed primarily for wideband large signal stages in the UHF frequency range.
MRF555 Power Macro ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC MSC1316.PDF 10-25-99 Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA 3.0 Watts 40 mW/ ºC MRF555 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCEO BVCES BVEBO ICES HFE Collector-Emitter Breakdown Voltage (IC = 5 mAdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) DC Current Gain (IC = 100 mA, VCE = 5.0 Vdc) Both Min.
16 30 3.0 50 Value Typ.
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