MRF555 - NPN SILICON RF LOW POWER TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF555
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	98.89 KB
Description	NPN SILICON RF LOW POWER TRANSISTOR
Datasheet	MRF555 Datasheet

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF555 1.5 W, 470 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.