Microsemi MS2208
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR DataSheet4U.com SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES.| Part No. | MS2208 |
|---|---|
| Datasheet | MS2208 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION |
| Buy | Stock & Price |
FEATURES
●●
●
●
● HERMETIC METAL/CERAMIC PACKAGE LOW THERMAL RESISTANCE 10:1 LOAD VSWR CAPABILITY BALLASTED OVERLAY GEOMETRY COMMON EMITTER CONFIGURATION
DESCRIPTION
: e DataSheABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol PDISS IC VCC TJ T STG Parameter Power Dissipation* (TC≤100ºC) Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature Value 1360 27 55 250 -65 to +200 Unit W A V °C °C Thermal Data RTH(J-C) Junction - Case Thermal Resistance *Applies only to rated RF amplifier operation 0.11 °C/W DataSheet4U.com MSC0926.PDF 10-09-98 DataSheet 4 U .com MS2208ELECTRICAL SPECIFICATIONS
(Tcase (Tcase = 25° C) STATIC Symbol Bvebo Bvcbo Bvces Ices HFE IE = 30 mA IC = 50 mA IC = 50 mA VBE = 50 mA VCE = 5.0 V Test Conditions Min. IC=0 mA IC=0 mA VBE=0 V VCE=50 V IC=1 A 3.0 70 70 --10 Value Typ. ----------- Max. ------40 200 Unit V V V mA B DYNAMIC Symbol Pout ηc GP Load Mismatch Conditions Test Conditions Min. Pin = 70W Pout Pout f=1090 MHz f=1090 MHz f=1090 M...
