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MSC020SDA120B - Zero Recovery Silicon Carbide Schottky Diode

Key Features

  • The following are key features of the MSC020SDA120B device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC020SDA120B device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC020SDA120B is a 1200 V, 20 A SiC SBD in a two-lead TO-247 package.