JANTX2N3847 Description
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices .. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.
- Part: JANTX2N3847
- Manufacturer: Microsemi (official site)
- Size: 83.05 KB
Related Microsemi Datasheets
| Part Number | Description |
|---|---|
| JANTX2N3846 | NPN POWER SILICON TRANSISTOR |
| JANTX2N3821 | N-Channel MOSFET |
| JANTX2N3822 | N-Channel MOSFET |
| JANTX2N3823 | N-Channel MOSFET |
| JANTX2N3867 | Silicon PNP Power Transistors |