PPNGZ52F120A Description
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. IC = 25 A MIN 1200 4.5 TYP.
PPNGZ52F120A Key Features
- Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low pac