Datasheet Details
| Part number | ICE10N73 |
|---|---|
| Manufacturer | Micross |
| File Size | 703.45 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 ICE10N73 Datasheet
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General Description
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Sourc
Key Features
- r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 730V 0.25Ω 82nC Pin.