Description
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Sourc
Features
- r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 730V 0.25Ω 82nC
Pin.
ICE10N73 Datasheet
