ICE10N73 - N-Channel Enhancement Mode MOSFET

Icemos

Key Features

Low rDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.25Ω 82nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER.

ICE10N73 n-channel enhancement mode mosfet by Icemos - Datasheet Preview

Datasheet Details

Part number	ICE10N73
Manufacturer	Icemos
File Size	428.35 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ICE10N73 Datasheet

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Preliminary Data Sheet ICE10N73 ICE10N73 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.25Ω 82nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.