ICE10N73
ICE10N73 is N-Channel Enhancement Mode MOSFET manufactured by Icemos.
Preliminary Data Sheet
ICE10N73 N-Channel
Enhancement Mode MOSFET
Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
ID V(BR)DSS rDS(on)
Qg
Product Summary
TA=25oC ID=250uA VGS=10V VDS=480V
10A 730V 0.25Ω 82nC
Max Min Typ Typ
T0220
ICEMOS AND ITS SISTER PANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN &...
