• Part: ICE10N73FP
  • Manufacturer: Micross
  • Size: 703.02 KB
Download ICE10N73FP Datasheet PDF
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ICE10N73FP Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.

ICE10N73FP Key Features

  • 55 to +150 50
  • 260 lowed At Leads
  • IGSS RDS(on)
  • 0.25 0.35
  • RGS Gate Resistance
  • 943 -8- 20
  • 10 -5- 67
  • pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2-ID- RDS, ID = 5A
  • 1.0 1.2
  • 423 -8- 34