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2N4351 Datasheet PDF

Micross 2N4351

The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
Part No. 2N4351
Datasheet 2N4351 Download
Manufacturer
Micross
Description N-Channel Mosfet
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2N4351 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) ID = 100mA gfS = 1000µS Maximum Temperatures Storage Temperature Operating Junction Temperature 2N4351

FEATURES

: Maximum Power Dissipation Continuous Power Dissipation ƒ Low ON Resistance MAXIMUM CURRENT ƒ Low Capacitance Drain to Source (Note 1) ƒ High Gain MAXIMUM VOLTAGES ƒ High Gate Breakdown Voltage Drain to Body ƒ Low Threshold Voltage Drain to Source Peak Gate to Source (Note 2) 2N4351

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 1 VGS(th) Gate to Source Threshold Voltage 1 ‐‐ 5 IGSS Gate Leakage Current ‐‐ ‐‐ 10 pA IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 nA ID(on) Drain Current “On” 3 ‐‐ ‐‐ mA gfs Forward Transconductance 1000 ‐‐ ‐‐ µS rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 300 Ω ‐65°C to +2...