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MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage*
vds vDg Vgs
25 30 30
Drain Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
id
Pd
Pd
30
300
1.7
800 4.56
Junction Temperature Range
Tj 175
Storage Temperature Range
Tstg
-65 to +175
'Transient potentials of ±75 Volt will not cause gate-oxide failure
Unit
Vdc
Vdc
Vdc mAdc
mW
mW/°C
mW
mW/°C
°C
°C
2N4351
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOS FET
SWITCHING
N-CHANNEL — ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
2N4351 Datasheet
