2N4351
2N4351 is MOS FET manufactured by Motorola Semiconductor.
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MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage- vds vDg Vgs
25 30 30
Drain Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C id
Pd
Pd
800 4.56
Junction Temperature Range
Tj 175
Storage Temperature Range
Tstg
-65 to +175
'Transient potentials of ±75 Volt will not cause gate-oxide failure
Unit
Vdc
Vdc
Vdc mAdc mW mW/°C mW mW/°C
°C
°C
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOS...
