J113
J113 is Switching manufactured by Micross.
Features
DIRECT REPLACEMENT FOR SILICONIX J113 LOW GATE LEAKAGE CURRENT 5p A FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +150°C J113 Benefits: Operating Junction Temperature ‐55°C to +135°C
- Short Sample & Hold Aperture Time Maximum Power Dissipation
- Low insertion loss Continuous Power Dissipation 360m W
- Low Noise MAXIMUM CURRENT J113 Applications: Gate Current (Note 1) 50m A
- Analog Switches MAXIMUM VOLTAGES
- mutators Gate to Drain Voltage VGDS = ‐35V
- Choppers Gate to Source Voltage VGSS = ‐35V J113 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐35 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐‐ ‐‐ ‐3 VDS = 5V, ID = 1µA V VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1m A, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 2 ‐‐ ‐‐ m A VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐0.005 ‐1 n A VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐0.5 ‐‐ p A VDG = 15V, ID = 10m A ID(off) Drain Cutoff Current ‐‐ 0.005 1 n A VDS = 5V, VGS = ‐10V r DS(on) Drain to Source On Resistance ‐‐ ‐‐ 100 Ω IG = 1m A, VDS = 0V J113 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 6 ‐‐ m S VDS = 20V, ID = 1m A , f = 1k Hz gos Output Conductance ‐‐ 25 ‐‐ µS r DS(on) Drain to Source On Resistance ‐‐ ‐‐ 100 Ω VGS = 0V, ID = 0m A, f = 1k Hz Ciss Input Capacitance ‐‐ 7 12 p F VDS = 0V, VGS = ‐10V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 3 5 en Equivalent Noise Voltage ‐‐ 3 ‐‐ n V/√Hz VDG = 10V, ID = 1m A , f = 1k Hz J113 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL ...
