FEATURES
DIRECT REPLACEMENT FOR SILICONIX J110 LOW ON RESISTANCE rDS(on) ≤ 18Ω FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C J110 Benefits: Operating Junction Temperature ‐55°C to +150°C Low On Resistance Maximum Power Dissipation Low insertion loss Continuous Power Dissipation 350mW Low Noise MAXIMUM CURRENT J110 APPLICATIONS
: Gate Current (Note 1) 50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = ‐25V Choppers Gate to Source Voltage VGSS = ‐25V J110 ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.5 ‐‐ ‐4 VDS = 5V, ID = 1µA V VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 10 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate...
Micross