onsemi J110
JFET - General Purpose N-Channel
FEATURES
1 DRAIN●
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● N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM
MAXIMUM RATINGS
Rating Gate−Source Voltage Drain −Gate Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temp Range Storage Temperature Range Symbol VGS VDG IG PD 310 2.82 TJ Tstg 135 −65 to +150 mW mW/°C °C °C J110 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Value −25 −25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 29 TO−92 (TO−226) STYLE 5 J110 AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.