J110 Datasheet | Motorola Semiconductor

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C J107, J108 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERAL-PURPOSE TRANSISTOR - N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (VDS = 0, Iq = -10 MAdc) Gate Reverse Current (VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDs = 0, TA = 100°C) Gate Source Cutoff Voltage (Vds = 15 Vdc, Iq = 10...