LS3250SB
LS3250SB is NPN Transistor manufactured by Micross.
Features
:
- Low Output Capacitance Features
LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Collector Current Maximum Voltages Collector to Collector Voltage ≤ 2p F
‐65°C to +150°C ‐55°C to +150°C TBD 50m A 80V
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ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 40 BVCEO Collector to Emitter Voltage 40 BVEBO2 Emitter‐Base Breakdown Voltage 6.2 100 DC Current Gain h FE 80 80 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ f T Current Gain Bandwidth Product ‐‐ NF Narrow Band Noise Figure ‐‐
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TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐
MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.25 0.2 0.2 2 600 3
UNITS V V V V n A n A p F MHz d B
CONDITIONS IC = 10m A, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1m A, VCE = 5V IC = 100m A, IB = 10m A IC = 0A, VCB = 3V IE = 0A, VCB = 20V IE = 0A, VCB = 10V IC = 1m A, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω, f = 1KHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. T0-92 (Bottom View)
Available Packages: LS3250SB in TO-92 LS3250SB available as bare die Please contact Micross for full package and die dimensions: Email: chipponents@micross. Web: .micross./distribution.aspx
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