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LS3550C Datasheet PDF

Micross LS3550C

The LS3550C is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
Part No. LS3550C
Datasheet LS3550C Download
Manufacturer
Micross
Description General Purpose
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LS3550C datasheet page 1 preview

FEATURES

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FEATURES

EXCELLENT THERMAL TRACKING TIGHT VBE MATCHING

ABSOLUTE MAXIMUM RATINGS

1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Collector Current Maximum Voltages Collector to Collector Voltage MIN ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ TYP ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX 10 15 10 1.0 15 UNITS mV µV/°C nA nA/°C % ≤ 15µV/°C |VBE1 – VBE2 | ≤10mV ‐65°C to +150°C ‐55°C to +150°C TBD 10mA 80V CONDITIONS IC = ‐10mA, VCE = ‐5V IC = ‐10mA, VCE = ‐5V TA = ‐40°C to +85°C IC = ‐10µA, VCE = ‐5V IC = ‐10µA, VCE = ‐5V TA = ‐40°C to +85°C IC = 10µA, VCE = 5V ƒ Tight matching Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/∆T Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN.