Datasheet4U.com

LS3N164 Datasheet PDF

Micross LS3N164

The LS3N164 is an enhancement mode P-Channel Mosfet The LS3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
Part No. LS3N164
Datasheet LS3N164 Download
Manufacturer
Micross
Description High Speed Switch
Buy Stock & Price
LS3N164 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR INTERSIL LS3N164 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation LS3N164

FEATURES

: MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current ƒ Low Capacitance MAXIMUM VOLTAGES ƒ High Gain Drain to Gate ƒ High Gate Breakdown Voltage Drain to Source ƒ Low Threshold Voltage Peak Gate to Source2 LS3N164

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS IGSSF Gate Forward Current ‐10 ‐‐ ‐‐ pA TA= +125°C ‐‐ ‐‐ ‐25 BVDSS Drain to Source Breakdown Voltage ‐30 ‐‐ ‐‐ BVSDS Source‐Drain Breakdown Voltage ‐30 ‐‐ ‐‐ V VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 ‐2.0 ‐‐ ‐5.0 VGS Gate Source Voltage ‐3.0 ‐‐ ‐6.5 IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 200 pA ISDS Source Drain Current ‐‐ ‐‐ 400 rDS(on) Drai...