LS3N166 Datasheet PDF

Micross LS3N166

The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. MAX UNITS CONDITIONS IGSSR Gate Reverse Leakage Current ‐‐ ‐‐ 10 VGS = ‐0V IGSSF Gate Forward Current ‐‐ ‐‐ ‐10 VGS = ‐40V pA TA= +125°C ‐‐ ‐‐ ‐25 IDSS Drain to Source Leakage Current ‐‐ ‐‐ ‐200 VDS = ‐20V ISDS Source to Drain Leakage Current ‐‐ ‐‐ ‐400 VSD = ‐20V VDB = 0 ID(on) Drain Current “On”...