LS5114
LS5114 is Switching manufactured by Micross.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE r DS(on) ≤ 75Ω LOW CAPACITANCE 6p F ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +200°C LS5114 Benefits: Operating Junction Temperature ‐55°C to +200°C
- Low On Resistance Maximum Power Dissipation
- ID(off) ≤ 500 p A Continuous Power Dissipation 500m W
- Switches directly from TTL logic MAXIMUM CURRENT LS5114 Applications: Gate Current (Note 1) IG = ‐50m A
- Analog Switches MAXIMUM VOLTAGES
- mutators Gate to Drain Voltage VGDS = 30V
- Choppers Gate to Source Voltage VGSS = 30V LS5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 4 ‐‐ 10 VDS = ‐15V, ID = ‐1n A V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1m A, VDS = 0V ‐‐ ‐1.0 ‐1.3 VGS = 0V, ID = ‐15m A VDS(on) Drain to Source On Voltage ‐‐ ‐0.7 ‐‐ VGS = 0V, ID = ‐7m A ‐‐ ‐0.5 ‐‐ VGS = 0V, ID = ‐3m A IDSS Drain to Source Saturation Current (Note 2) ‐30 ‐‐ ‐90 m A VDS = ‐18V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐5 ‐‐ VDS = ‐15V, ID = ‐1m A p A ‐‐ ‐10 ‐500 VDS = ‐15V, VGS = 12V ID(off) Drain Cutoff Current ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 5V r DS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = ‐1m A, VGS = 0V LS5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ m S VDS = ‐15V, ID = 1m A , f = 1k Hz gos Output Conductance ‐‐ 20 ‐‐ µS r DS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = 0A, VGS = 0V, f = 1k Hz Ciss Input Capacitance ‐‐ 20 25 VDS = ‐15V, VGS = 0V, f = 1M...
