FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(on) ≤ 150Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +200°C LS5116 Benefits: Operating Junction Temperature ‐55°C to +200°C Low On Resistance Maximum Power Dissipation ID(off) ≤ 500 pA Continuous Power Dissipation 500mW Switches directly from TTL logic MAXIMUM CURRENT LS5116 APPLICATIONS
: Gate Current (Note 1) IG = ‐50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V LS5116 ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 1 ‐‐ 4 VDS = ‐15V, ID = ‐1nA V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1mA, VDS = 0V ‐‐ ‐1.0 ‐‐ VGS = 0V, ID = ‐15mA VDS(on) Drain to Source On Volta...
Micross