LSJPAD10
LSJPAD10 is PicoAmp Diode manufactured by Micross.
Features a leakage current of -10 p A and is well suited for use in applications such as input protection for operational amplifiers. Features
DIRECT REPLACEMENT FOR SILICONIX JPAD10 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1)
BVR ≥ ‐35V ≤ 10 p A Crss ≤ 2.0p F
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LSJPAD10 Benefits:
- -
- Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation
‐65°C to +150°C ‐55°C to +135°C 350m W 10m A
LSJPAD10 Applications:
- - Op Amp Input Protection Multiplexer Overvoltage Protection
LSJPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐35 ‐‐ VF Forward Voltage ‐‐ 0.8 Cr SS Total Reverse Capacitance ‐‐ 1.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐
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MAX. ‐‐ 1.5 2 ‐10 UNITS V V p F p A TO-92 (Bottom View) C A 1 2
CONDITIONS IR = ‐1µA IF = 5m A VR = ‐5V, f = 1MHz VR = ‐ 20V
Notes: 1. Absolute maximum ratings are limiting values above which LSJPAD10 serviceability may be impaired.
Available Packages: LSJPAD10 in TO-92 LSJPAD10 available as bare die Please contact Micross for full package and die dimensions
Micross ponents Europe Tel: +44 1603 788967 Email: chipponents@micross. Web: http://.micross./distribution.
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Micross ponents Ltd, United Kingdom, Tel:...