LSJPAD100 Datasheet PDF

Micross LSJPAD100

The LSJPAD100 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The LSJPAD100 features a leakage current of -100 pA and is well suited for use in applications such as input protection for operational amplifiers.

Part No.	LSJPAD100
Datasheet	LSJPAD100 Download
Manufacturer	Micross
Description	PicoAmp Diode
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR SILICONIX LSJPAD100 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) BVR ≥ ‐35V ≤ 100 pA Crss ≤ 2.0pF LSJPAD100 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 350mW 10mA LSJPAD100

APPLICATIONS

: Op Amp Input Protection Multiplexer Overvoltage Protection LSJPAD100

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. BVR Reverse Breakdown Voltage ‐35 ‐‐ ‐‐ VF Forward Voltage ‐‐ 0.8 1.5 CrSS Total Reverse Capacitance ‐‐ 1.5 2 IR Maximum Reverse Leakage Current ‐‐ ‐‐ ‐100 Click To Buy UNITS V V pF pA TO-92 (Bottom View) C A 1 2 CONDITIONS IR = ‐1µA IF = 5mA VR = ‐5V, f = 1MHz VR = ‐ 20V Notes: 1.