LSPAD1 Datasheet | Micross

Features a leakage current of -1 p A and is well suited for use in applications such as input protection for operational amplifiers. Features   DIRECT REPLACEMENT FOR SILICONIX PAD1  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐45V  ≤ 1 p A  Crss ≤ 0.8p F  .. LSPAD1 Benefits: - - - Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  300m W  50m A  LSPAD1 Applications: - - Op Amp Input Protection Multiplexer Overvoltage Protection   LSPAD1 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐45  ‐‐  VF  Forward Voltage  ‐‐  0.8  Cr SS  Total Reverse Capacitance  ‐‐  0.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  0.8  ‐1  UNITS  V  V  p F  p A  TO-72 (Bottom View) CONDITIONS  IR = ‐1µA  IF = 5m A  VR = ‐5V, f = 1MHz  VR = ‐ 20V  Notes: 1. Absolute maximum ratings are limiting values above which LSPAD1 serviceability may be impaired. Available Packages: LSPAD1 in TO-72 LSPAD1 available as bare die Please contact Micross for full package and die dimensions Micross ponents Europe Tel: +44 1603 788967 Email: chipponents@micross. Web: http://.micross./distribution.aspx Information furnished by Linear Integrated Systems and Micross ponents is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross ponents Ltd, United Kingdom, Tel: +44...