LSU421
LSU421 is Low Leakage manufactured by Micross.
Features
, this series offers operating gate current specified at -250 f A. The LSU421 is a direct replacement for discontinued Siliconix U421. The hermetically sealed TO-71 & TO-78 packages are well suited for military applications. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features
HIGH INPUT IMPEDANCE HIGH GAIN LOW POWER OPERATION ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) IG = 0.25p A MAX gfs = 120µmho MIN VGS(OFF) = 2V MAX
LSU421 Applications:
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- Ultra Low Input Current Differential Amps High-Speed parators Impedance Converters
Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS |∆V GS1‐2 /∆T|max. DRIFT VS. 10 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 m V VDG=10V, ID=30µA TYP. 60 ‐‐ ‐‐ 200 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.1 90 90 ‐‐ 20 10 ‐‐ ‐‐ MAX. ‐‐ ‐‐ 1500 350 1000 2.0 1.8 .25 250 1.0 1.0 10 3.0 ‐‐ ‐‐ 1 70 ‐‐ 3.0 1.5 UNITS V V µmho µmho µA V V p A p A p A n A µmho µmho d B d B d B n V/√Hz p F p F CONDITIONS VDS = 0 IG =1n A IG = 1µA ID = 0 IS= 0 VDS = 10V VGS = 0V f = 1k Hz VDG = 10V ID = 30µA f = 1k Hz VDS = 10V VGS = 0V VDS = 10V ID = 1n A VDG = 10V ID = 30µA VDG = 10V ID = 30µA TA = +125°C ...
