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LSU423 Datasheet PDF

Micross LSU423

The LSU423 is a high input impedance Monolithic Dual N-Channel JFET The LSU423 monolithic dual n-channel JFET is designed to provide very high input impedance for differential amplification and impedance matching. The LSU423 is a direct replacement for discontinued Siliconix U423. The hermetically sealed TO-71 & TO-78 packages are well suited for military applications.
Part No. LSU423
Datasheet LSU423 Download
Manufacturer
Micross
Description Low Leakage
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LSU423 datasheet page 1 preview

FEATURES

HIGH INPUT IMPEDANCE HIGH GAIN LOW POWER OPERATION

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) IG = 0.25pA MAX gfs = 120µmho MIN VGS(OFF) = 2V MAX LSU423

APPLICATIONS

: ƒ ƒ ƒ Ultra Low Input Current Differential Amps High-Speed Comparators Impedance Converters Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS |∆V GS1‐2 /∆T|max. DRIFT VS. 40 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 25 mV VDG=10V, ID=30µA TYP. 60 ‐‐ ‐‐ 200 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.1 90 90 ‐‐ 20 10 ‐‐ ‐‐ MAX. ‐‐ ‐‐ 1500 350 1000 2.0 1.8 .25 250 1.0 1.0 10 3.0 ‐‐ ‐‐ 1 70 ‐‐...