Micross SMJ44400
1M x 4 DRAM
FEATURES
● Organized 1,048,576 x 4● Single +5V ±10% power supply
● Enhanced Page-Mode operation for faster memory access 3 Higher data bandwidth than conventional page-mode parts 3 Random Single-Bit Access within a row with a column address
● CAS\-Before-RAS\ (CBR) Refresh
● Long Refresh period: 1024-cycle Refresh in 16ms (Max)
● 3-State unlatched Output
● Low Power Dissipation
● All Inputs/Outputs and Clocks are TTL Compatible
● Processing to MIL-STD-883, Class B available PIN ASSIGNMENT (Top View) 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20 Vss 19 DQ4 18 DQ3 17 CAS\ 16 OE\ 15 A8 14 A7 13 A6 12 A5 11 A4 Pin Name Function A0 - A9 Address Inputs CAS\ Column-Address Strobe DQ1 - DQ4 Data Inputs/Outputs OE\ Output Enable RAS\ Row-Address Strobe W\ Write Enable Vcc 5V S