CFK2062-P1 Datasheet | Mimix Broadband

Features High Gain +30 d Bm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package Applications ISM Band Base Stations and Terminals Cellular Base Stations and Terminals Wireless Local Loop 8 7 6 5 D GND GND D Package Diagram G GND GND G 1 2 3 4 Back Plane is Source Description The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 d Bm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is patible with high volume, automated board assembly techniques. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 850 MHz. .. SO-8 Power Package Physical Dimensions Parameters Conditions Min Typ Max Units Vd = 8V, Id = 400 m A (Quiescent) P-1 d B SSG 3rd Order Products (1) Efficiency @ P1d B Vd = 5V, Id = 600 m A (Quiescent) P-1 d B SSG Parameters Conditions 29.0 30.0 18.0 20.0 - - - - Min - - - - - - Max d Bm d B d Bc % d Bm d B Units 30 40 29.5 19.0 Typ gm Idss Vp BVGD JL (2) Vds = 2.0V, Vgs = 0V Vds = 2.0V, Vgs = 0V Vds = 3.0V, Ids = 25 m A Igd = 2.5 m A @150°C TCH - - - 15 - 650 1.4 -1.8 17 12 - - - - m S A Volts Volts °C/W Absolute Maximum Ratings Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Channel Temperature Storage Temperature VDS VGS IDS PT TCH...