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CFK2062-P1 - Power GaAs FET

General Description

The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm.

linearity at 1 Watt.

Key Features

  • High Gain +30 dBm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package.

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Datasheet Details

Part number CFK2062-P1
Manufacturer Mimix Broadband
File Size 164.82 KB
Description Power GaAs FET
Datasheet download datasheet CFK2062-P1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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800-900 MHz +30 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2062-P1 Features High Gain +30 dBm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package Applications ISM Band Base Stations and Terminals Cellular Base Stations and Terminals Wireless Local Loop 8 7 6 5 D GND GND D Package Diagram G GND GND G 1 2 3 4 Back Plane is Source Description The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt.