CMM0014-BD Datasheet | Mimix Broadband

Features Small Size: 45 x 92 mils High Gain: 11.5 d B, Nom Medium Power: +25 d Bm, Typ P1d B @14 GHz Directly Cascadable - Fully Matched Unconditionally Stable Single Bias Operation Bias Control p HEMT Technology Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 8V)1 Parameters .. Units Min Typ Max Frequency Range Small Signal Gain Gain Flatness Gain Variation (-40°C to +85°C) Input Return Loss Output Return Loss Power Output (@1 d B Gain pression) 1 P1d B Variation (over operating frequency) P1d B Variation (-40°C to +85°C) Saturated Output Power Second Order Intercept Point @ 10 GHz Third Order Intercept Point @ 10 GHz Noise Figure Current Thermal Resistance Stability 2 GHz d B ±d B ±d B d B d B d Bm d Bm ±d Bm d Bm d Bm d Bm d B m A °C/W 2.0 10.0 22.0 13.5 0.8 0.35 -10.0 -9.0 22.5 4.5 0.25 29.0 48.0 37.5 250 Unconditionally Stable 295 7.5 340 33.0 Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3). 2. Stability factor measured on-wafer. Absolute Maximum Ratings Parameter Rating Die Attach and Bonding Procedures 7V (min.) / 9V (max.) 350 m A 2.8 W +20 d Bm -50°C to +150°C +175°C -40 to (see note 2)°C Die Attach: Eutectic die attach is remended. For eutectic die attach: Preform: Au Sn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (prestressed); Thermopression bonding is preferred over thermosonic bonding. For thermopression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire. Drain Voltage Drain Current Continuous Power Dissipation Input Power Storage Temperature Channel Temperature Operating Backside Temperature Notes: 1. Operation outside these limits can cause permanent damage. 2. Calculation maximum operating temperature: Tmax = 175- (Pdis [W] x 33.0) [°C]. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099...