CMM0016 Datasheet | Mimix Broadband

Features Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1d B: 29 d Bm, Typ. @ 18 GHz Linear Gain: 9.5 d B, Typ. @ 18 GHz p HEMT Technology Silicon Nitride Passivation Chip Diagram Units: mm Specifications (TA= 25°C,Vdd = 12V)1 Parameters Units Min Typ Max .. Frequency Range Linear Gain Gain Flatness Power Output: 2-18 GHz (@1 d B Gain pression) Power Output: 2-20 GHz (@1 d B Gain pression) P1d B Variation (over operating frequency) Saturated Output Power: 2-18 GHz Saturated Output Power: 2-20 GHz Input Return Loss Output Return Loss Current Thermal Resistance GHz d B ±d B d Bm d Bm d Bm d Bm d Bm d B d B m A °C/W 2.0 8.5 28.5 26.5 20.0 12.5 1.5 5.0 29.5 27.5 -10.0 -10.0 730 15.7 Stability 2 Unconditionally Stable Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4). 2. Stability factor measured on-wafer. Absolute Maximum Ratings1 Parameter Rating Die Attach and Bonding Procedures Die Attach: Eutectic die attach is remended. For eutectic die attach: Preform: Au Sn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (prestressed); Thermopression bonding is preferred over thermosonic bonding. For thermopression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire. Drain Voltage 9.0V (min.) / 13.0V (max.) Drain Current 750 m A Continuous Power Dissipation 9.5 W Input Power 20 d Bm Storage Temperature -50°C to +150°C Channel Temperature 175°C Operating Backside Temperature -40°C to (See note 2) Notes: 1. Operation outside these limits can cause permanent damage. 2. Calculation maximum operating temperature: Tmax = 175- (Pdis [W] x 15.7) [°C]. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615...