Click to expand full text
2.0-18.0 GHz GaAs MMIC Low Noise Amplifier
July 2006 - Rev 06-Jul-06
CMM4000-BD Chip Device Layout
Features
Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 9.0 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via www.DataSheet4U.