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XB1004 - GaAs MMIC Buffer Amplifier

Datasheet Summary

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.5 VDC 200 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table 5 MTTF Table 5 (5) Channel temperature affects

Features

  • High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaA.

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Datasheet Details

Part number XB1004
Manufacturer Mimix Broadband
File Size 476.51 KB
Description GaAs MMIC Buffer Amplifier
Datasheet download datasheet XB1004 Datasheet
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Full PDF Text Transcription

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16.0-30.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1004 Chip Device Layout Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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