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18.0-38.0 GHz GaAs MMIC Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1006 Chip Device Layout
Features
High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
XB1006 Datasheet
