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XP1020-BD - GaAs MMIC Power Amplifier

Datasheet Summary

Description

Mimix Broadband’s two stage 11.0-19.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +27.0 dBm saturated output power.

Features

  • Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1020-BD General.

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Datasheet Details

Part number XP1020-BD
Manufacturer Mimix Broadband
File Size 330.48 KB
Description GaAs MMIC Power Amplifier
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11.0-19.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 30-Jan-07 P1020-BD Chip Device Layout Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1020-BD General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +27.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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