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XP1022-BD - GaAs MMIC Power Amplifier

General Description

Mimix Broadband’s three stage 17.0-25.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.0 dB with a +28.0 dBm P1dB output compression point across the band.

The device also includes an on-chip temperature compensated output power detector.

Key Features

  • Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.

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Datasheet Details

Part number XP1022-BD
Manufacturer Mimix Broadband
File Size 265.04 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1022-BD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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17.0-25.0 GHz GaAs MMIC Power Amplifier February 2007 - Rev 05-Feb-07 P1022-BD Chip Device Layout Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 17.0-25.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.0 dB with a +28.0 dBm P1dB output compression point across the band. The device also includes an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.