Description
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) ESD - Human Body Model ESD - Machine Body Model +6.0 VDC 350 mA +0.3 VDC +0.0 dBm -65 to +165 deg C -55 to MTTF Table1 MTTF Table1 Class 1A Class M1 Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) 2 LO Input Drive (PLO) Leakage @ RF Port LOx1 Leakage @ RF Port LOx2 Output Third Order Intercept (OIP3) 1,2 Drain Bias Voltage (Vd) Gate Bias Voltage (Vg1) Gate Bias Voltage (Vg2) Mixer, Doubler Dynamic Range Control (Vc) Supply Current (Id) (Vd=4.0V) Supply Current (Ic) Units GHz GHz GHz GHz dB dB dBm dBm dBm dBm VDC VDC VDC VDC mA mA Min.
Key Features
- I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband
- This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications
