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XU1009-BD - GaAs MMIC Transmitter

Description

XU1009-BD Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 320,190,110 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (1)

Features

  • Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept (OIP3) 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout U1009-BD Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed ampl.

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Datasheet Details

Part number XU1009-BD
Manufacturer Mimix Broadband
File Size 284.21 KB
Description GaAs MMIC Transmitter
Datasheet download datasheet XU1009-BD Datasheet
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18.0-36.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept (OIP3) 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout U1009-BD Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies.
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