CMA-545 Datasheet | Mini-Circuits

Monolithic Ultra Low Noise, High IPA3 mplifier 50Ω 0.05 to 6 GHz CMA-545+ The Big Deal - Ceramic, Hermetically sealed, Nitrogen Filled - Low profile case, .045” high - Ultra Low Noise Figure, 0.8 d B typ. - Output Power, +20d Bm at 1GHz CASE STYLE: DL1721 Product Overview Mini-Circuits CMA-545+ delivers a unique bination of ultra low noise and high IP3 performance, ideal for sensitive receiver applications. The E-PHEMT amplifier die is bonded to a multilayer integrated LTCC substrate, and then hermetically sealed under a controlled nitrogen atmosphere with gold-plated covers and eutectic Au Sn solder. As a result, this rugged amplifier has met MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. The CMA-545+ operates on a single 3V supply and is internally matched to 50Ω, with no external matching ponents required. Key Features Feature Ultra Low Noise: 0.8 d B NF at 1GHz Advantages Industry Leading Noise Figure, measured in a 50 Ohm environment - without any external matching. High IP3: bining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise +35 d Bm IP3 at 1GHz Receiver Front End (RFE) because it gives the user advantages at both ends of the dynamic range, sensitivity & high level operation. Output Power: +20 d Bm at 1GHz Broad Band: 0.05 to 6.0GHz Internally Matched Ceramic Hermetic Package Max Input Power +20 d Bm High Reliability The CMA-545+ maintains consistent output power capability over the full operating temperature range making it ideal to be used in remote applications such as LNB’s as the L Band driver stage. Broadband covering primary wireless munications bands: Cellular, PCS, LTE, Wi MAX. No external matching elements required to achieve the advertized noise and output power over the full band. Low Inductance, repeatable performance, excellent reliability. Ruggedized design operates up to input powers often seen at Receiver inputs. Can operate up to +20...