CMA-545G1 Datasheet | Mini-Circuits

LMowo Noniseo, Hliigthh IPi3c Amplifier 50Ω 0.4 to 2.2 GHz The Big Deal - Ceramic, Hermetically Sealed, Nitrogen filled - Low profile case, .045” high - High Gain, 31.5 d B - Low Noise Figure, 1.0 d B - High IP3, 35-37 d Bm - Class 1B HBM ESD rating (500V) CMA-545G1+ CASE STYLE: DL1721 Product Overview Mini-Circuits CMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz with a unique bination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single +5V supplyand is internally matched to 50 ohms. The MMIC amplifier is bonded to a multilayer integrated LTCC substrate and then hermetically sealed under a controlled nitrogen atmosphere with gold-plated covers and eutectic Au Sn solder. These amplifiers have been tested to MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. Key Features Feature High Gain 25-32 d B Ultra Low Noise: 0.8 d B NF at 0.9 GHz High IP3: +36 d Bm IP3 at 0.9 GHz Output Power: +22 d Bm at 0.9 GHz Internally Matched Ceramic Hermetic Package Max Input Power +25 d Bm High Reliability Advantages Incorporating multiple stages of amplification, the CMA-545G1+ provides high gain reducing cost and PCB board space. Excellent Noise Figure, measured in a 50 Ohm environment - without any external matching. When bined with high gain of this design, it suppresses second stage NF contribution. bining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise Receiver Front End (RFE) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range The CMA-545G1+ maintains consistent output power capability over the full operating temperature range making it ideal to be used in remote applications such as LNB’s as the L Band driver stage No external matching elements required to achieve the advertized noise and output power over the full...