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2SK2973 - RF POWER MOS FET

Description

2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

  • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm.
  • High efficiency:55% typ.
  • Source case type SOT-89 package (connected internally to source) 1 2 3.

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Datasheet preview – 2SK2973

Datasheet Details

Part number 2SK2973
Manufacturer Mitsubishi Electric Semiconductor
File Size 33.56 KB
Description RF POWER MOS FET
Datasheet download datasheet 2SK2973 Datasheet
Additional preview pages of the 2SK2973 datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX 0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.4 +0.03 -0.05 3.0 MARKING SOT-89 MARKING TYPE No. K1 LOT No.
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